Passivation structure and method of making the same

ABSTRACT

A passivation structure includes a bottom dielectric layer. The passivation structure further includes a doped dielectric layer over the bottom dielectric layer. The doped dielectric layer includes a first doped layer and a second doped layer. The passivation structure further includes a top dielectric layer over the doped dielectric layer.

PRIORITY CLAIM

The present application is a continuation-in-part of U.S. applicationSer. No. 13/539,160, filed Jun. 29, 2012, the disclosure of which isincorporated herein by reference in its entirety.

TECHNICAL FIELD

The present disclosure relates generally to an integrated circuit andmore particularly a passivation structure and a method of making thesame.

BACKGROUND

A passivation film (or layer) deactivates chemically and electricallyactive broken bonds at a semiconductor surface by reacting with selectedelements; e.g. hydrogen or oxide grown on Si surface. Some integratedcircuit devices have a passivation film over metal layers.

Integrated circuits including the passivation film are put under productqualification tests such as High Temperature Reverse Bias (HTRB) and/orPressure Cooker Test (PCT). HTRB testing is an accelerated life-test forintegrated circuit devices that is often used to verify the robustnessof the devices themselves and the reliability of assembly and packagingof the integrated circuit devices. PCT tests water/moisture resistanceat test conditions of high temperature and high pressure.

With some passivation films, mobile ions from molding compound aredriven into the passivation films, and moisture can be ionized betweenthe molding compound and the passivation film under HTRB test. Theseions cannot be easily neutralized if the passivation film is a goodinsulator. These mobile ions can degrade the breakdown voltage (BV) ofthe devices.

BRIEF DESCRIPTION OF THE DRAWINGS

Reference is now made to the following descriptions taken in conjunctionwith the accompanying drawings, in which:

FIG. 1 is a cross-sectional view of an integrated circuit with apassivation structure according to some embodiments.

FIGS. 2A-2C are cross-sectional views of a passivation structureaccording to some embodiments.

FIG. 3 is a flowchart of a method for forming a passivation structureaccording to some embodiments.

DETAILED DESCRIPTION

The making and using of various embodiments are discussed in detailbelow. It should be appreciated, however, that the present disclosureprovides many applicable inventive concepts that can be embodied in awide variety of specific contexts. The specific embodiments discussedare illustrative of specific ways to make and use, and do not limit thescope of the disclosure.

In addition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.Moreover, the formation of a feature on, connected to, and/or coupled toanother feature in the present disclosure that follows may includeembodiments in which the features are formed in direct contact, and mayalso include embodiments in which additional features may be formedinterposing the features, such that the features may not be in directcontact. In addition, spatially relative terms, for example, “lower,”“upper,” “horizontal,” “vertical,” “above,” “below,” “up,” “down,”“top,” “bottom,” etc. as well as derivatives thereof (e.g.,“horizontally,” “downwardly,” “upwardly,” etc.) are used for ease of thepresent disclosure of one features relationship to another feature. Thespatially relative terms are intended to cover different orientations ofthe device including the features.

FIG. 1 is a cross-sectional view of a portion of an integrated circuit100 with a passivation structure according to some embodiments. Theintegrated circuit 100 includes a substrate 102, a dielectric layer 104,a metal layer 106, passivation structure 107, and a molding compoundlayer 114. The substrate 102 comprises silicon, germanium, galliumarsenide, indium phosphide, silicon carbide, Silicon-On-Insulator (SOI),or any other suitable material. Electrical components such astransistors, resistors, any other devices can be formed on the substrate102 by any suitable methods known in the art in some embodiments.

The dielectric layer 104 comprises silicon dioxide (SiO₂), siliconnitride (e.g., Si₃N₄), high-k dielectric (e.g., HfO₂), low-k dielectric,or any other suitable material. The dielectric layer 104 can be intermetal dielectric (IMD) or inter layer dielectric (ILD) in someembodiments. The metal layer 106 comprises Al, Cu, Sn, Ni, Au, Ag, orother suitable material, and can be deposited using electroplating,physical vapor deposition (PVD), or any other suitable process. Themetal layer 106 is used for electrical interconnects or contacts, forexample.

The passivation structure 107 includes a bottom dielectric layer 108, adoped-dielectric layer 110, and a top dielectric layer 112. The bottomdielectric layer 108 comprises oxide (SiO₂), for example. The bottomdielectric layer 108 is undoped or unintentionally doped, in someembodiments. The bottom dielectric layer 108 has a thickness rangingfrom 2000 Å to 3000 Å in some embodiments. If a thickness of bottomdielectric layer 108 is too small, bottom dielectric layer does notprovide sufficient protection for metal layer 106 in some instances. Ifa thickness of bottom dielectric layer 108 is too great, additionalmaterial is consumed and production costs increase without a substantialincrease in performance of the bottom dielectric layer. In someembodiments, bottom dielectric layer 108 is formed using chemical vapordeposition (CVD), physical vapor deposition (PVD), an epitaxial processor another suitable formation process.

The doped dielectric layer 110 includes a dielectric material and adopant. The dopant includes at least one of a p-type dopant or an n-typedopant. In some embodiments, the dielectric material includes siliconoxide (SiO₂) or another suitable dielectric material. In someembodiments, the p-type dopant includes boron, boron di-fluoride, oranother suitable p-type dopant. In some embodiments, the n-type dopantincludes phosphorous, arsenic, or another suitable n-type dopant. Insome embodiments, a concentration of the dopant ranges from about 1% byweight to about 10% by weight. If the concentration of the dopant is toohigh, doped dielectric layer 110 becomes conductive and does not providesufficient electrical insulation properties which negatively impactsHTRB stress test results, in some instances. If the concentration of thedopant is too low, doped dielectric layer 110 has a reduced ability todistribute mobile ions, in some instances. A thickness of dopeddielectric layer 110 ranges from about 3000 angstroms to about 10,000angstroms, in some embodiments. If the thickness of doped dielectriclayer 110 is too large, additional material is used which increasesproduction cost without a significant increase in performance of thedoped dielectric layer, in some instances. If the thickness of dopeddielectric layer 110 is too small, an ability of the doped dielectriclayer to distribute mobile ions is reduced, in some instances.

In some embodiments, doped dielectric layer 110 is formed using TEOS(Tetraethyl Orthosilicate) using sub-atmospheric pressure chemical vapordeposition (SACVD) or another suitable formation process. In someembodiments, the dopant is introduced into doped dielectric layer 110during a formation process. In some embodiments, the dopant isintroduced after the formation process is completed. In someembodiments, the dopant is introduced after the formation process by ionimplantation, annealing or another suitable dopant introduction process.

In some embodiments, doped dielectric layer 110 is a multilayerstructure. FIG. 2A is a cross-sectional view of a passivation structure207 according to some embodiments. Passivation structure 207 is similarto passivation structure 107 and same elements have a same referencenumber increased by 100. In comparison with passivation structure 107,passivation structure 207 includes a multilayer doped dielectric layerincluding a first doped layer 210 a and a second doped layer 210 b. Eachof first doped layer 210 a and second doped layer 210 b includes adielectric material including a dopant. In some embodiments, a dopanttype in first dopant layer 210 a is the same as a dopant type in seconddopant layer 210 b. In some embodiments, the dopant type in first dopantlayer 210 a is different from the dopant type in second dopant layer 210b. In some embodiments, a dopant species in first dopant layer 210 a isthe same as a dopant species in second dopant layer 210 b. In someembodiments, the dopant species in first dopant layer 210 a is differentfrom the dopant species in second dopant layer 210 b. A dopantconcentration in first doped layer 210 a and a dopant concentration insecond doped layer 210 b independently range from about 1% by weight toabout 10% by weight. In some embodiments, the dopant concentration infirst dopant layer 210 a is the same as the dopant concentration insecond dopant layer 210 b. In some embodiments, the dopant concentrationin first dopant layer 210 a is different from the dopant concentrationin second dopant layer 210 b. In some embodiments, a thickness of firstdoped layer 210 a is equal to a thickness of second doped layer 210 b.In some embodiments, the thickness of first doped layer 210 a isdifferent from a thickness of second doped layer 210 b.

In some embodiments, first doped layer 210 a and second doped layer 210b are formed within a same tool by changing flow rates of dopants duringformation of the first doped layer or the second doped layer. In someembodiments, first doped layer 210 a is formed and is subsequentlydoped; the second doped layer 210 b is formed and is subsequently doped.In some embodiments, a dielectric material in first doped layer 210 a isdifferent from a dielectric material in second doped layer 210 b. Forexample, first doped layer 210 a is silicon oxide doped with phosphorousand second doped layer 210 b is silicon nitride doped with phosphorous,in some embodiments.

FIG. 2B is a cross-sectional view of a passivation structure 207′according to some embodiments. Passivation structure 207′ is similar topassivation structure 207. In comparison with passivation structure 207,passivation structure 207′ includes a first doped layer 210 a′, a seconddoped layer 210 b′ and a third doped layer 210 c′. Similar to firstdoped layer 210 a and second doped layer 210 b, first doped layer 210a′, second doped layer 210 b′ and third doped layer 210 c′ independentlyinclude various dopant types, dopant species and dopant concentrations.Varying a dopant concentration between first doped layer 210 a′; seconddoped layer 210 b′ and third doped layer 210 c′ helps to control adistribution location for mobile ions. For example, when a dopantconcentration of first doped layer 210 a′ is higher than a dopantconcentration of second doped layer 210 b′ and a dopant concentration ofthird doped layer 210 c′, more mobile ions are distributed within thefirst doped layer instead of the second doped layer or the third dopedlayer. Similarly, when the dopant concentration of third doped layer 210c′ is higher than the dopant concentration of second doped layer 210 b′and the dopant concentration of first doped layer 210 a′, more mobileions are distributed within the third doped layer instead of the seconddoped layer or the first doped layer. In some embodiments, second dopedlayer 210 b′ has a dopant concentration greater than at least one offirst doped layer 210 a′ or third doped layer 210 c′. Controlling thelocation of mobile ions within doped dielectric layer 110 helps toregulate performance, such as BV, of an integrated circuit, e.g.,integrated circuit 100 (FIG. 1). FIGS. 2A and 2B include a multilayerstructure having two layers and three layers, respectively. In someembodiments, the multilayer structure of doped dielectric layer includesmore than three layers.

In some embodiments, the dopant concentration in doped dielectric layer110 is variable. FIG. 2C is a cross-sectional view of a passivationstructure 207″ according to some embodiments. Passivation structure 207″is similar to passivation structure 207. In comparison with passivationstructure 207, passivation structure 207″ includes at least one dopedlayer having a gradient dopant concentration. In some embodiments,passivation structure 207″ includes at least one doped layer having asubstantially constant dopant concentration. In some embodiments, the atleast one gradient doped layer has a dopant concentration whichincreases as a distance from bottom dielectric layer 108 (FIG. 1)increases. In some embodiments, the at least one gradient doped layerhas a dopant concentration which increases as the distance from bottomdielectric layer 108 decreases. In some embodiments, the at least onedoped layer has a dopant concentration which increases to a maximum asthe distance from bottom dielectric layer 108 increases and decreasesfrom the maximum as the distance form the bottom dielectric layercontinues to increase. A distribution of mobile ions with dopeddielectric layer 210″ increases as the dopant concentration increases.

Returning to FIG. 1, top dielectric layer 112 is undoped orunintentionally doped, in some embodiments. In some embodiments, topdielectric layer 112 comprises silicon nitride (e.g., Si₃N₄), siliconoxynitride, or polyimide. The top dielectric layer 112 is selected forgood performance of water resistance under PCT in some embodiments. Thetop dielectric layer 112 has a thickness ranging from 2000 Å to 3000 Åin some embodiments. In some embodiments, top dielectric layer 112 isformed with silane using CVD, PVD, an epitaxial process or anothersuitable formation process. The thicknesses of the bottom dielectriclayer 108, the doped dielectric layer 110, and the top dielectric layer112 can be modified for different devices and applications.

Even though the bottom dielectric layer 108, the doped dielectric layer110, and the top dielectric layer 112 are formed directly adjacent tothe next layer as shown in FIG. 1, there are one or more interveninglayers in between the three dielectric layers, in some embodiments.

The molding compound layer 114 comprises polymer such as epoxy or anyother suitable molding compound material. The molding compound layer 114can be formed, e.g., by an injection molding process or hot embossingprocess.

The passivation structure 107 improves device electric fielddistribution and performances under HTRB and PCT tests. The topdielectric layer 112, e.g., Si₃N₄, protects integrated circuits formedon the substrate 102 from water. The doped dielectric layer 110, e.g.,oxide (SiO₂) doped with phosphorus and/or boron (e.g., deposited withPTEOS or BPTEOS), provides a path for mobile ions moving from themolding compound layer 114. The mobile ions are distributed relativelyuniformly along the doped dielectric layer 110, which prevents localconcentration of mobile ions. This prevents mobile ions gathering atdevice locations such as a drain site and a source site which may buildlocal electric field and deteriorate the integrated circuit functions.

For some exemplary integrated circuits using the passivation structure107 in FIG. 1, the BV under HTRB test was increased about 50 V fromabout 850 V to about 900 V after 168 hours under stress. In comparison,conventional integrated circuits without using the passivation structure107 in FIG. 1 showed reduced BV from about 850 V to about 700 V underthe same test. The integrated circuits using the passivation structure107 also showed good performance after 96 hours under PCT.

FIG. 3 is a flowchart of a method for forming a passivation structureaccording to some embodiments. At step 302, a bottom dielectric layer,e.g., bottom dielectric layer 108, is formed over a substrate forpassivation. The bottom dielectric layer is undoped or unintentionallydoped, in some embodiments. The bottom dielectric layer has a thicknessranging from about 2000 Å to about 3000 Å in some embodiments. In someembodiments, the bottom dielectric layer is formed using CVD, PVD, anepitaxial process or another suitable formation process.

At step 304, a doped dielectric layer, e.g., doped dielectric layer 110,is formed over the bottom dielectric layer. The doped dielectric layerincludes a dielectric material and at least one n-type dopant or p-typedopant. The doped dielectric layer has a thickness ranging from about3000 Å to about 10,000 Å in some embodiments. In some embodiments, thedoped dielectric layer 110 is formed with with TEOS usingsub-atmospheric pressure chemical vapor deposition (SACVD) or anothersuitable formation process.

At step 306, a top dielectric layer, e.g., top dielectric layer 112, isformed over the doped dielectric layer. The top dielectric layer isundoped or unintentionally doped. The top dielectric layer is selectedfor better performance of water resistance under PCT in someembodiments. The top dielectric layer has a thickness ranging from about2000 Å to about 3000 Å in some embodiments. The top dielectric layer isformed with silane using CVD, PVD, an epitaxial process or anothersuitable formation process. The thicknesses of the bottom dielectriclayer, the doped dielectric layer, and the top dielectric layer are ableto be modified for different devices and applications.

One aspect of this description relates to a passivation structure. Thepassivation structure includes a bottom dielectric layer. Thepassivation structure further includes a doped dielectric layer over thebottom dielectric layer. The doped dielectric layer includes a firstdoped layer and a second doped layer. The passivation structure furtherincludes a top dielectric layer over the doped dielectric layer.

Another aspect of this description relates to a passivation structure.The passivation structure includes a bottom dielectric layer. Thepassivation structure further includes a doped dielectric layer over thebottom dielectric layer. A dopant concentration of the doped dielectriclayer varies as a distance from the bottom dielectric layer increases.The passivation structure further includes a top dielectric layer overthe doped dielectric layer. Still another aspect of this descriptionrelates to a method of making a passivation structure. The methodincludes forming a doped dielectric layer over a bottom dielectriclayer. Forming the doped dielectric layer includes forming a first dopedlayer over the bottom dielectric layer, and forming a second doped layerover the first doped layer. The method further includes forming a topdielectric layer over the doped dielectric layer.

A skilled person in the art will appreciate that there can be manyembodiment variations of this disclosure. Although the embodiments andtheir features have been described in detail, it should be understoodthat various changes, substitutions and alterations can be made hereinwithout departing from the spirit and scope of the embodiments.Moreover, the scope of the present application is not intended to belimited to the particular embodiments of the process, machine,manufacture, and composition of matter, means, methods and stepsdescribed in the specification. As one of ordinary skill in the art willreadily appreciate from the disclosed embodiments, processes, machines,manufacture, compositions of matter, means, methods, or steps, presentlyexisting or later to be developed, that perform substantially the samefunction or achieve substantially the same result as the correspondingembodiments described herein may be utilized according to the presentdisclosure.

The above method embodiment shows exemplary steps, but they are notnecessarily required to be performed in the order shown. Steps may beadded, replaced, changed order, and/or eliminated as appropriate, inaccordance with the spirit and scope of embodiment of the disclosure.Embodiments that combine different claims and/or different embodimentsare within the scope of the disclosure and will be apparent to thoseskilled in the art after reviewing this disclosure.

What is claimed is:
 1. A passivation structure comprising: a bottomdielectric layer; a doped dielectric layer over the bottom dielectriclayer, wherein the doped dielectric layer comprises a first doped layerand a second doped layer; and a top dielectric layer over the dopeddielectric layer.
 2. The passivation structure of claim 1, wherein adopant type of the first doped layer is different from a dopant type ofthe second doped layer.
 3. The passivation structure of claim 1, whereina dopant type of the first doped layer is a same dopant type as thesecond doped layer.
 4. The passivation structure of claim 1, wherein adopant concentration of the first doped layer is different from a dopantconcentration of the second doped layer.
 5. The passivation structure ofclaim 1, wherein a dopant centration of the first doped layer is a samedopant concentration of the second doped layer.
 6. The passivationstructure of claim 1, wherein the doped dielectric layer has a thicknessranging from 3,000 angstroms to 10,000 angstroms.
 7. The passivationstructure of claim 1, wherein the top dielectric layer comprises siliconnitride, silicon oxynitride, or polyimide.
 8. The passivation structureof claim 1, wherein the doped dielectric layer comprises a third dopedlayer.
 9. The passivation structure of claim 8, wherein a dopantconcentration of the third doped layer is different from at least one ofa dopant concentration of the first doped layer or a dopantconcentration of the second doped layer.
 10. The passivation structureof claim 1, wherein a thickness of the first doped layer is differentfrom a thickness of the second doped layer.
 11. A passivation structurecomprising: a bottom dielectric layer; a doped dielectric layer over thebottom dielectric layer, wherein a dopant concentration of the dopeddielectric layer varies as a distance from the bottom dielectric layerincreases; and a top dielectric layer over the doped dielectric layer.12. The passivation structure of claim 11, wherein the dopantconcentration of the doped dielectric layer increases as the distancefrom the bottom dielectric layer increases.
 13. The passivationstructure of claim 11, wherein the dopant concentration of the dopeddielectric layer decreases as the distance from the bottom dielectriclayer increases.
 14. The passivation structure of claim 11, wherein thedopant concentration of the doped dielectric layer increases to amaximum concentration as the distance from the bottom dielectric layerincreases to a first distance, and the dopant concentration of the dopeddielectric layer decreases from the maximum concentration as thedistance from the bottom dielectric layer increases beyond the firstdistance.
 15. The passivation structure of claim 11, wherein the dopeddielectric layer comprises a first doped layer and a second doped layer,wherein the first doped layer is between the first doped layer and thebottom dielectric layer, and a dopant concentration of the first dopedlayer is different from a dopant concentration of the second dopedlayer.
 16. A method of making a passivation structure, the methodcomprising: forming a doped dielectric layer over a bottom dielectriclayer, wherein forming the doped dielectric layer comprises: forming afirst doped layer over the bottom dielectric layer, and forming a seconddoped layer over the first doped layer; and forming a top dielectriclayer over the doped dielectric layer.
 17. The method of claim 16,wherein forming the second doped layer comprises forming the seconddoped layer having a different dopant type from a dopant type of thefirst doped layer.
 18. The method of claim 16, wherein forming thesecond doped layer comprises forming the second doped layer having adifferent dopant concentration from a dopant concentration of the firstdoped layer.
 19. The method of claim 16, wherein forming the seconddoped layer comprises forming the second doped layer having a differentthickness from a thickness of the first doped layer.
 20. The method ofclaim 16, wherein forming the doped dielectric layer comprises formingthe doped dielectric layer having a thickness from 3,000 angstroms to10,000 angstroms.